Multiple Scanning Knife-Edge Beam Profiler

OS-BA-SAT

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Multiple Scanning Knife-Edge Beam Profiler

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OS-BA-SAT

A compact stand-alone type beam measuring device with an integrated touch screen.

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Name Spectral Range Beam Size Range Number of Blades Delivery Price Add to cart

InGaAs (IR) beam profiler, 3 blades for 800 - 1800 nm
BA3-IR5-USB

800 - 1800 nm

3 µm - 5 mm

1-3 weeks

Specifications	3-blades, InGaAs detector 5mm circular
Sensor Type	InGaAs (IR)
Beamwidth Resolution	1 µm for beams>100 µm in size, 0.1µm for beams<100µm in size
Beamwidth Accuracy	±2%
Power Range	10 µW to 5 mW
Power Accuracy	±10%
Saturation	0.1 W/cm² without filter
Operature Temperature	10°C to 35°C

InGaAs Enhanced (IRE) beam profiler, 7 blades for 1200 - 2700 nm
BA7-IR3E-USB

1200 - 2700 nm

15 µm - 3 mm

1-3 weeks

Specifications	7-blades, InGaAs Enhanced 3mm circular
Sensor Type	InGaAs Enhanced (IRE)
Beamwidth Resolution	1 µm for beams>100 µm in size, 0.1µm for beams<100µm in size
Beamwidth Accuracy	±2%
Power Range	10 µW to 5 mW
Power Accuracy	±10%
Position Resolution	1 µm
Position Accuracy	±15 µm
Saturation	0.1 W/cm² without filter
Measurement Rate	5 Hz
Operating Temperature	10°C to 35°C

Silicone (Si) beam profiler, 7 blades for 350 - 1100 nm
BA7-Si-USB

350 - 1100 nm

15 µm - 9 mm

1-3 weeks

Specifications	7-blades, Si detector 9mm square
Sensor Type	Silicone (Si)
Beamwidth Resolution	1 µm for beams>100 µm in size, 0.1µm for beams<100µm in size
Beamwidth Accuracy	±2%
Power Range	10 µW to 1 W
Power Accuracy	±5%
Position Resolution	1 µm
Position Accuracy	±15 µm
Saturation	0.1 W/cm² without filter
Measurement Rate	5 Hz
Operating Temperature	10°C to 35°C

Silicone (Si) beam profiler, 3 blades for 350 - 1100 nm
BA3-Si-USB

350 - 1100 nm

3 µm - 5 mm

1-3 weeks

Specifications	3-blades, Si detector 5mm circular
Sensor Type	Silicone (Si)
Beamwidth Resolution	1 µm for beams>100 µm in size, 0.1µm for beams<100µm in size
Beamwidth Accuracy	±2%
Power Range	10 µW to 1 W
Power Accuracy	±5%
Position Resolution	1 µm
Position Accuracy	±15 µm
Saturation	0.1 W/cm² without filter
Measurement Rate	5 Hz
Operating Temperature	10°C to 35°C

InGaAs (IR) beam profiler, 7 blades for 800 - 1800 nm
BA7-IR3-USB

800 - 1800 nm

15 µm - 3 mm

1-3 weeks

Specifications	7-blades, InGaAs detector 3mm circular
Sensor Type	InGaAs (IR)
Beamwidth Resolution	1 µm for beams>100 µm in size, 0.1µm for beams<100µm in size
Beamwidth Accuracy	±2%
Power Range	10 µW to 5 mW
Power Accuracy	±10%
Position Resolution	1 µm
Position Accuracy	±15 µm
Saturation	0.1 W/cm² without filter
Measurement Rate	5 Hz
Operating Temperature	10°C to 35°C

UV-Silicon (UV-Si) beam profiler, 7 blades for 190 - 1100 nm
BA7-UV-USB

190 - 1100 nm

15 µm - 9 mm

1-3 weeks

Specifications	7-blades, UV-Si detector 9mm square
Sensor Type	UV-Silicon (UV-Si)
Power Range	10 µW to 1 W
Position Accuracy	±15 µm
Beamwidth Accuracy	±2%
Beamwidth Resolution	1 µm for beams>100 µm in size, 0.1µm for beams<100µm in size
Operating Temperature	10°C to 35°C

InGaAs (IR) beam profiler, 3 blades for 800 - 1800 nm
BA3-IR3-USB

800 - 1800 nm

3 µm - 3 mm

1-3 weeks

Specifications	3-blades, InGaAs Enhanced 3mm circular
Sensor Type	InGaAs (IR)
Beamwidth Resolution	1 µm for beams>100 µm in size, 0.1µm for beams<100µm in size
Beamwidth Accuracy	±2%
Power Range	10 µW to 5 mW
Power Accuracy	±10%
Position Resolution	1 µm
Position Accuracy	±15 µm
Saturation	0.1 W/cm² without filter
Operating Temperature	10°C to 35°C
Measurement rate	5 Hz

UV-Silicon (UV-Si) beam profiler, 3 blades for 190 - 1100 nm
BA3-UV-USB

190 - 1100 nm

3 µm - 5 mm

1-3 weeks

Specifications	3-blades, UV-Si detector 5mm circular
Sensor Type	UV-Silicon (UV-Si)
Beamwidth Resolution	1 µm for beams>100 µm in size, 0.1µm for beams<100µm in size
Beamwidth Accuracy	±2%
Power Range	10 µW to 1 W
Power Accuracy	±5%
Position Resolution	1 µm
Position Accuracy	±15 µm
Saturation	0.1 W/cm² without filter
Measuremet Rate	5 Hz
Operating Temperature	10°C to 35°C

InGaAs (IR) beam profiler, 7 blades for 800 - 1800 nm
BA7-IR5-USB

800 - 1800 nm

15 µm - 5mm

1-3 weeks

Specifications	7-blades, InGaAs detector 5mm circular
Sensor Type	InGaAs (IR)
Beamwidth Resolution	1 µm for beams>100 µm in size, 0.1µm for beams<100µm in size
Beamwidth Accuracy	±2%
Power Range	10 µW to 5 mW
Power Accuracy	±10%
Position Resolution	1 µm
Position Accuracy	±15 µm
Saturation	0.1 W/cm² without filter
Measurement Rate	5 Hz
Operating Temperature	10°C to 35°C

InGaAs Enhanced (IRE) beam profiler, 3 blades for 1200 - 2700 nm
BA3-IR3E-USB

1200 - 2700 nm

3 µm - 3 mm

1-3 weeks

Power Range	10 µW to 5 mW
Pwer Accuracy	±10%
Position Resolution	1 µm
Position Accuracy	±15 µm
Saturation	0.1 W/cm² without filter
Measurement Rate	5 Hz
Operating Temperature	10°C to 35°C

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◦Supports a wide wavelength measurement range (190nm to 2700nm), and capable of measuring beam profile, beam size, beam shape, position and beam intensity. It measures beam size between 3μm and 9mm with 0.1μm resolution.

[Features]
◦12-bit A/D converter enables high resolution sampling.
◦Real-time beam profiling displays beam size, beam intensity and Gaussian fits.
◦Capable of calculating the beam gravity center and ellipticity of loaded data. In addition, it can save external control and logging data in Excel or text (.txt) format using RS232C and TCP/IP communication.
◦USB control type is available as option.